IPT020N10N3ATMA1 Pricing (USD) [23384pcs Stock]
- 1 pcs$1.76242
- 2,000 pcs$1.58464
- Part Number:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 300A 8HSOF.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPT020N10N3ATMA1 electronic components. IPT020N10N3ATMA1 can be shipped within 24 hours after order. If you have any demands for IPT020N10N3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT020N10N3ATMA1 Product Attributes
Part Number :
IPT020N10N3ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 300A 8HSOF
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 272µA
Gate Charge (Qg) (Max) @ Vgs :
156nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11200pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HSOF-8-1
Package / Case :
8-PowerSFN
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