Vishay Siliconix - SI6469DQ-T1-GE3

KEY Part #: K6393743

SI6469DQ-T1-GE3 Pricing (USD) [144590pcs Stock]

  • 1 pcs$0.25709
  • 3,000 pcs$0.25581

Part Number:
SI6469DQ-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 8V 8TSSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - JFETs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SI6469DQ-T1-GE3 electronic components. SI6469DQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6469DQ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI6469DQ-T1-GE3 Product Attributes

Part Number : SI6469DQ-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 8V 8TSSOP
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id : 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSSOP
Package / Case : 8-TSSOP (0.173", 4.40mm Width)