SIHD4N80E-GE3 Pricing (USD) [46760pcs Stock]
- 1 pcs$0.83620
- Part Number:
- SIHD4N80E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 800V FP TO-252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHD4N80E-GE3 electronic components. SIHD4N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD4N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD4N80E-GE3 Product Attributes
Part Number :
SIHD4N80E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 800V FP TO-252
Series :
E
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.27 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
622pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
69W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-PAK (TO-252AA)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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