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ON Semiconductor - NTMS4920NR2G

KEY Part #: K6396036

NTMS4920NR2G Pricing (USD) [279208pcs Stock]

  • 1 pcs$0.13314
  • 2,500 pcs$0.13247
Part Number:
NTMS4920NR2G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 10.6A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NTMS4920NR2G electronic components. NTMS4920NR2G can be shipped within 24 hours after order. If you have any demands for NTMS4920NR2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMS4920NR2G Product Attributes

Part Number : NTMS4920NR2G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 10.6A 8SOIC
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4068pF @ 25V
FET Feature : -
Power Dissipation (Max) : 820mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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