Vishay Semiconductor Diodes Division - RGP30J-E3/73

KEY Part #: K6440229

RGP30J-E3/73 Pricing (USD) [278337pcs Stock]

  • 1 pcs$0.13289
  • 2,000 pcs$0.12043

Part Number:
RGP30J-E3/73
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 3A DO201AD. Diodes - General Purpose, Power, Switching 600 Volt 3.0A 250ns 125 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGP30J-E3/73 electronic components. RGP30J-E3/73 can be shipped within 24 hours after order. If you have any demands for RGP30J-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP30J-E3/73 Product Attributes

Part Number : RGP30J-E3/73
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 3A DO201AD
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : DO-201AD, Axial
Supplier Device Package : DO-201AD
Operating Temperature - Junction : -65°C ~ 175°C

You May Also Be Interested In
  • IDB30E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A

  • IDB30E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 52.3A TO263.

  • BYM07-200/32

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213.

  • VS-HFA04TB60SPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 4A D2PAK.

  • UH2DHE3_A/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,25ns, SMB Planar FER RECT, SMD

  • BYD13GGPHE3/73

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO204AL.