SI3590DV-T1-GE3 Pricing (USD) [239890pcs Stock]
- 1 pcs$0.15419
- 3,000 pcs$0.14509
- Part Number:
- SI3590DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N/P-CH 30V 2.5A 6-TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Thyristors - SCRs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI3590DV-T1-GE3 electronic components. SI3590DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3590DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3590DV-T1-GE3 Product Attributes
Part Number :
SI3590DV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 30V 2.5A 6-TSOP
Series :
TrenchFET®
Part Status :
Active
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.5A, 1.7A
Rds On (Max) @ Id, Vgs :
77 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power - Max :
830mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
6-TSOP
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