SQV120N10-3M8_GE3 Pricing (USD) [45191pcs Stock]
- 1 pcs$0.86522
- Part Number:
- SQV120N10-3M8_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 120A TO262-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs, Diodes - RF, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQV120N10-3M8_GE3 electronic components. SQV120N10-3M8_GE3 can be shipped within 24 hours after order. If you have any demands for SQV120N10-3M8_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQV120N10-3M8_GE3 Product Attributes
Part Number :
SQV120N10-3M8_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 120A TO262-3
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7230pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-262-3
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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