DMT69M8LPS-13 Pricing (USD) [45795pcs Stock]
- 2,500 pcs$0.17663
- Part Number:
- DMT69M8LPS-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CHA 60V 10.2A POWERDI.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT69M8LPS-13 electronic components. DMT69M8LPS-13 can be shipped within 24 hours after order. If you have any demands for DMT69M8LPS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT69M8LPS-13 Product Attributes
Part Number :
DMT69M8LPS-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CHA 60V 10.2A POWERDI
Series :
Automotive, AEC-Q101
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
10.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1925pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.3W (Ta), 113W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI5060-8
Package / Case :
8-PowerTDFN
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