Vishay Siliconix - SIRC04DP-T1-GE3

KEY Part #: K6411800

SIRC04DP-T1-GE3 Pricing (USD) [110081pcs Stock]

  • 1 pcs$0.33600

Part Number:
SIRC04DP-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 60A POWERPAKSO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIRC04DP-T1-GE3 electronic components. SIRC04DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRC04DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRC04DP-T1-GE3 Product Attributes

Part Number : SIRC04DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 60A POWERPAKSO-8
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.45 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 2850pF @ 15V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

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