TK60E08K3,S1X(S Pricing (USD) [53208pcs Stock]
- 1 pcs$0.73485
- 50 pcs$0.64847
- Part Number:
- TK60E08K3,S1X(S
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 75V 60A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Thyristors - SCRs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK60E08K3,S1X(S electronic components. TK60E08K3,S1X(S can be shipped within 24 hours after order. If you have any demands for TK60E08K3,S1X(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK60E08K3,S1X(S Product Attributes
Part Number :
TK60E08K3,S1X(S
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 75V 60A TO-220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
60A
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
128W
Operating Temperature :
-
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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