Vishay Siliconix - SI7892BDP-T1-E3

KEY Part #: K6395930

SI7892BDP-T1-E3 Pricing (USD) [116699pcs Stock]

  • 1 pcs$0.75258
  • 10 pcs$0.66812
  • 100 pcs$0.52806
  • 500 pcs$0.40952
  • 1,000 pcs$0.30583

Part Number:
SI7892BDP-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 15A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7892BDP-T1-E3 Product Attributes

Part Number : SI7892BDP-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 15A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3775pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.8W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8