Infineon Technologies - IPL60R065P7AUMA1

KEY Part #: K6416981

IPL60R065P7AUMA1 Pricing (USD) [22085pcs Stock]

  • 1 pcs$1.86609

Part Number:
IPL60R065P7AUMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 4VSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Special Purpose, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies IPL60R065P7AUMA1 electronic components. IPL60R065P7AUMA1 can be shipped within 24 hours after order. If you have any demands for IPL60R065P7AUMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL60R065P7AUMA1 Product Attributes

Part Number : IPL60R065P7AUMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 4VSON
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id : 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2895pF @ 400V
FET Feature : -
Power Dissipation (Max) : 201W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-VSON-4
Package / Case : 4-PowerTSFN

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