FF6MR12W2M1B11BOMA1 Pricing (USD) [291pcs Stock]
- 1 pcs$158.99959
- Part Number:
- FF6MR12W2M1B11BOMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET MODULE 1200V 200A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies FF6MR12W2M1B11BOMA1 electronic components. FF6MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF6MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF6MR12W2M1B11BOMA1 Product Attributes
Part Number :
FF6MR12W2M1B11BOMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET MODULE 1200V 200A
Series :
CoolSiC™
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
200A (Tj)
Rds On (Max) @ Id, Vgs :
5.63 mOhm @ 200A, 15V
Vgs(th) (Max) @ Id :
5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs :
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
14700pF @ 800V
Power - Max :
20mW (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
AG-EASY2BM-2
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