IXYS - IXTP110N12T2

KEY Part #: K6398064

IXTP110N12T2 Pricing (USD) [22265pcs Stock]

  • 1 pcs$2.03603
  • 10 pcs$1.81789
  • 100 pcs$1.49067
  • 500 pcs$1.20708
  • 1,000 pcs$0.96581

Part Number:
IXTP110N12T2
Manufacturer:
IXYS
Detailed description:
120V/110A TRENCHT2 POWER MOSFET.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - RF, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in IXYS IXTP110N12T2 electronic components. IXTP110N12T2 can be shipped within 24 hours after order. If you have any demands for IXTP110N12T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP110N12T2 Product Attributes

Part Number : IXTP110N12T2
Manufacturer : IXYS
Description : 120V/110A TRENCHT2 POWER MOSFET
Series : TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6570pF @ 25V
FET Feature : -
Power Dissipation (Max) : 517W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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