IXYS - IXFY30N25X3

KEY Part #: K6399907

IXFY30N25X3 Pricing (USD) [18555pcs Stock]

  • 1 pcs$2.22113

Part Number:
IXFY30N25X3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 250V 30A TO252AA.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in IXYS IXFY30N25X3 electronic components. IXFY30N25X3 can be shipped within 24 hours after order. If you have any demands for IXFY30N25X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFY30N25X3 Product Attributes

Part Number : IXFY30N25X3
Manufacturer : IXYS
Description : MOSFET N-CH 250V 30A TO252AA
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1450pF @ 25V
FET Feature : -
Power Dissipation (Max) : 176W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252AA
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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