Part Number :
IXTT10N100D2
Description :
MOSFET N-CH 1000V 10A TO-267
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
5320pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
695W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA