IPAW60R600CEXKSA1 Pricing (USD) [79254pcs Stock]
- 1 pcs$0.49336
- 450 pcs$0.26190
- Part Number:
- IPAW60R600CEXKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V TO220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Power Driver Modules and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPAW60R600CEXKSA1 electronic components. IPAW60R600CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAW60R600CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAW60R600CEXKSA1 Product Attributes
Part Number :
IPAW60R600CEXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V TO220-3
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
20.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
444pF @ 100V
FET Feature :
Super Junction
Power Dissipation (Max) :
28W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220 Full Pack
Package / Case :
TO-220-3 Full Pack
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