IXYS - IXFA4N85X

KEY Part #: K6397380

IXFA4N85X Pricing (USD) [30967pcs Stock]

  • 1 pcs$1.46753
  • 10 pcs$1.30888
  • 100 pcs$1.01824
  • 500 pcs$0.82453
  • 1,000 pcs$0.69538

Part Number:
IXFA4N85X
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 850V 3.5A TO263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - Special Purpose and Diodes - RF ...
Competitive Advantage:
We specialize in IXYS IXFA4N85X electronic components. IXFA4N85X can be shipped within 24 hours after order. If you have any demands for IXFA4N85X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA4N85X Product Attributes

Part Number : IXFA4N85X
Manufacturer : IXYS
Description : MOSFET N-CH 850V 3.5A TO263
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 850V
Current - Continuous Drain (Id) @ 25°C : 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 247pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB