STMicroelectronics - STB25NM50N

KEY Part #: K6415657

[12334pcs Stock]


    Part Number:
    STB25NM50N
    Manufacturer:
    STMicroelectronics
    Detailed description:
    MOSFET N-CH 500V 22A D2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Bridge Rectifiers ...
    Competitive Advantage:
    We specialize in STMicroelectronics STB25NM50N electronic components. STB25NM50N can be shipped within 24 hours after order. If you have any demands for STB25NM50N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STB25NM50N Product Attributes

    Part Number : STB25NM50N
    Manufacturer : STMicroelectronics
    Description : MOSFET N-CH 500V 22A D2PAK
    Series : MDmesh™ II
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 500V
    Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 140 mOhm @ 11A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 84nC @ 10V
    Vgs (Max) : ±25V
    Input Capacitance (Ciss) (Max) @ Vds : 2565pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 160W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D2PAK
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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