Infineon Technologies - IPP50R399CPHKSA1

KEY Part #: K6418805

IPP50R399CPHKSA1 Pricing (USD) [78131pcs Stock]

  • 1 pcs$0.50045
  • 500 pcs$0.47341

Part Number:
IPP50R399CPHKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 560V 9A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Programmable Unijunction ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP50R399CPHKSA1 Product Attributes

Part Number : IPP50R399CPHKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 560V 9A TO-220
Series : CoolMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 560V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 399 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 890pF @ 100V
FET Feature : -
Power Dissipation (Max) : 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3-1
Package / Case : TO-220-3