TK100S04N1L,LQ Pricing (USD) [81067pcs Stock]
- 1 pcs$0.51416
- 2,000 pcs$0.51160
- Part Number:
- TK100S04N1L,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 40V 100A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK100S04N1L,LQ electronic components. TK100S04N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK100S04N1L,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK100S04N1L,LQ Product Attributes
Part Number :
TK100S04N1L,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 40V 100A DPAK
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
76nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5490pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK+
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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