IRL40B212 Pricing (USD) [27833pcs Stock]
- 1 pcs$1.41905
- 10 pcs$1.26833
- 100 pcs$0.98655
- 500 pcs$0.79887
- 1,000 pcs$0.67375
- Part Number:
- IRL40B212
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 195A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRL40B212 electronic components. IRL40B212 can be shipped within 24 hours after order. If you have any demands for IRL40B212, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL40B212 Product Attributes
Part Number :
IRL40B212
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 195A
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
137nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8320pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
231W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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