Infineon Technologies - BSZ076N06NS3GATMA1

KEY Part #: K6420287

BSZ076N06NS3GATMA1 Pricing (USD) [178410pcs Stock]

  • 1 pcs$0.20732
  • 5,000 pcs$0.18227

Part Number:
BSZ076N06NS3GATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 20A TSDSON-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ076N06NS3GATMA1 Product Attributes

Part Number : BSZ076N06NS3GATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 20A TSDSON-8
Series : OptiMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TSDSON-8
Package / Case : 8-PowerVDFN

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