IXFQ50N50P3 Pricing (USD) [12758pcs Stock]
- 1 pcs$3.55204
- 10 pcs$3.19596
- 100 pcs$2.62772
- 500 pcs$2.20159
- 1,000 pcs$1.91751
- Part Number:
- IXFQ50N50P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 50A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in IXYS IXFQ50N50P3 electronic components. IXFQ50N50P3 can be shipped within 24 hours after order. If you have any demands for IXFQ50N50P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ50N50P3 Product Attributes
Part Number :
IXFQ50N50P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 50A TO-3P
Series :
HiPerFET™, Polar3™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4335pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
960W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
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