Toshiba Semiconductor and Storage - TPCP8103-H(TE85LFM

KEY Part #: K6406719

[1222pcs Stock]


    Part Number:
    TPCP8103-H(TE85LFM
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET P-CH 40V 4.8A PS-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - JFETs, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TPCP8103-H(TE85LFM electronic components. TPCP8103-H(TE85LFM can be shipped within 24 hours after order. If you have any demands for TPCP8103-H(TE85LFM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPCP8103-H(TE85LFM Product Attributes

    Part Number : TPCP8103-H(TE85LFM
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET P-CH 40V 4.8A PS-8
    Series : U-MOSIII-H
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 4.8A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 40 mOhm @ 2.4A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 840mW (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PS-8 (2.9x2.4)
    Package / Case : 8-SMD, Flat Lead

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