Vishay Siliconix - SIHB22N60ET5-GE3

KEY Part #: K6417671

SIHB22N60ET5-GE3 Pricing (USD) [38295pcs Stock]

  • 1 pcs$1.02100

Part Number:
SIHB22N60ET5-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 21A TO263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Diodes - Rectifiers - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB22N60ET5-GE3 Product Attributes

Part Number : SIHB22N60ET5-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 21A TO263
Series : E
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1920pF @ 100V
FET Feature : -
Power Dissipation (Max) : 227W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D²Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB