STMicroelectronics - STP28N60M2

KEY Part #: K6396828

STP28N60M2 Pricing (USD) [34875pcs Stock]

  • 1 pcs$1.18174
  • 1,000 pcs$0.99800

Part Number:
STP28N60M2
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 600V 24A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in STMicroelectronics STP28N60M2 electronic components. STP28N60M2 can be shipped within 24 hours after order. If you have any demands for STP28N60M2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP28N60M2 Product Attributes

Part Number : STP28N60M2
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 600V 24A TO-220
Series : MDmesh™ II Plus
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 37nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1370pF @ 100V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220
Package / Case : TO-220-3

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