STMicroelectronics - STI20N65M5

KEY Part #: K6396766

STI20N65M5 Pricing (USD) [37803pcs Stock]

  • 1 pcs$1.03434
  • 1,000 pcs$0.92074

Part Number:
STI20N65M5
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 650V 18A I2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in STMicroelectronics STI20N65M5 electronic components. STI20N65M5 can be shipped within 24 hours after order. If you have any demands for STI20N65M5, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STI20N65M5 Product Attributes

Part Number : STI20N65M5
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 650V 18A I2PAK
Series : MDmesh™ V
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1434pF @ 100V
FET Feature : -
Power Dissipation (Max) : 130W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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