Infineon Technologies - IRFB7430PBF

KEY Part #: K6400327

IRFB7430PBF Pricing (USD) [26417pcs Stock]

  • 1 pcs$1.66144
  • 10 pcs$1.48472
  • 100 pcs$1.21757
  • 500 pcs$0.93538
  • 1,000 pcs$0.78888

Part Number:
IRFB7430PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N CH 40V 195A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies IRFB7430PBF electronic components. IRFB7430PBF can be shipped within 24 hours after order. If you have any demands for IRFB7430PBF, Please submit a Request for Quotation here or send us an email:
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IRFB7430PBF Product Attributes

Part Number : IRFB7430PBF
Manufacturer : Infineon Technologies
Description : MOSFET N CH 40V 195A TO220
Series : HEXFET®, StrongIRFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 460nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 14240pF @ 25V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3