IPP65R660CFDAAKSA1 Pricing (USD) [2913pcs Stock]
- 500 pcs$0.52427
- Part Number:
- IPP65R660CFDAAKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V TO-220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPP65R660CFDAAKSA1 electronic components. IPP65R660CFDAAKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R660CFDAAKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R660CFDAAKSA1 Product Attributes
Part Number :
IPP65R660CFDAAKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V TO-220-3
Series :
Automotive, AEC-Q101, CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
543pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
62.5W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3
Package / Case :
TO-220-3
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