TSM280NB06LCR RLG Pricing (USD) [378506pcs Stock]
- 1 pcs$0.09772
- Part Number:
- TSM280NB06LCR RLG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM280NB06LCR RLG electronic components. TSM280NB06LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM280NB06LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM280NB06LCR RLG Product Attributes
Part Number :
TSM280NB06LCR RLG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET SINGLE N-CHANNEL TRENCH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
7A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
969pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 56W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PDFN (5x6)
Package / Case :
8-PowerTDFN
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