Part Number :
TPH6R30ANL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4300pF @ 50V
Power Dissipation (Max) :
2.5W (Ta), 54W (Tc)
Operating Temperature :
150°C
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP Advance (5x5)
Package / Case :
8-PowerVDFN