ON Semiconductor - NTS2101PT1G

KEY Part #: K6421268

NTS2101PT1G Pricing (USD) [791414pcs Stock]

  • 1 pcs$0.04674
  • 3,000 pcs$0.04581

Part Number:
NTS2101PT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 8V 1.4A SOT-323.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - RF, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in ON Semiconductor NTS2101PT1G electronic components. NTS2101PT1G can be shipped within 24 hours after order. If you have any demands for NTS2101PT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTS2101PT1G Product Attributes

Part Number : NTS2101PT1G
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 8V 1.4A SOT-323
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 8V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.4nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 8V
FET Feature : -
Power Dissipation (Max) : 290mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70-3 (SOT323)
Package / Case : SC-70, SOT-323

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