Vishay Siliconix - SQ2348ES-T1_GE3

KEY Part #: K6405370

SQ2348ES-T1_GE3 Pricing (USD) [388683pcs Stock]

  • 1 pcs$0.09516
  • 3,000 pcs$0.08092

Part Number:
SQ2348ES-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 8A SOT-23.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ2348ES-T1_GE3 electronic components. SQ2348ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2348ES-T1_GE3, Please submit a Request for Quotation here or send us an email:
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ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2348ES-T1_GE3 Product Attributes

Part Number : SQ2348ES-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 8A SOT-23
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 15V
FET Feature : -
Power Dissipation (Max) : 3W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236
Package / Case : TO-236-3, SC-59, SOT-23-3