Vishay Siliconix - SQ1470EH-T1-GE3

KEY Part #: K6405466

[1655pcs Stock]


    Part Number:
    SQ1470EH-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 30V 2.8A SC70.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - RF, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - DIACs, SIDACs ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SQ1470EH-T1-GE3 electronic components. SQ1470EH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQ1470EH-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SQ1470EH-T1-GE3 Product Attributes

    Part Number : SQ1470EH-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 30V 2.8A SC70
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 2.8A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 65 mOhm @ 3.8A, 4.5V
    Vgs(th) (Max) @ Id : 1.6V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 4.5V
    Vgs (Max) : ±12V
    Input Capacitance (Ciss) (Max) @ Vds : 610pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.3W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SC-70-6 (SOT-363)
    Package / Case : 6-TSSOP, SC-88, SOT-363