IRFL024NTRPBF Pricing (USD) [322420pcs Stock]
- 1 pcs$0.11472
- 2,500 pcs$0.09841
- Part Number:
- IRFL024NTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 55V 2.8A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFL024NTRPBF electronic components. IRFL024NTRPBF can be shipped within 24 hours after order. If you have any demands for IRFL024NTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL024NTRPBF Product Attributes
Part Number :
IRFL024NTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 55V 2.8A SOT223
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223
Package / Case :
TO-261-4, TO-261AA
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