IRF530STRRPBF Pricing (USD) [91023pcs Stock]
- 1 pcs$0.42957
- 800 pcs$0.40620
- Part Number:
- IRF530STRRPBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 14A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - IGBTs - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRF530STRRPBF electronic components. IRF530STRRPBF can be shipped within 24 hours after order. If you have any demands for IRF530STRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF530STRRPBF Product Attributes
Part Number :
IRF530STRRPBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 14A D2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
670pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.7W (Ta), 88W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (D²Pak)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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