BSS606NH6327XTSA1 Pricing (USD) [390012pcs Stock]
- 1 pcs$0.09484
- 1,000 pcs$0.08261
- Part Number:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 3.2A SOT89.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSS606NH6327XTSA1 electronic components. BSS606NH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS606NH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS606NH6327XTSA1 Product Attributes
Part Number :
BSS606NH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 3.2A SOT89
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
657pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SOT89
Package / Case :
TO-243AA
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