[8359pcs Stock]
- Part Number:
- IRFB9N60A
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 9.2A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Diodes - Zener - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFB9N60A electronic components. IRFB9N60A can be shipped within 24 hours after order. If you have any demands for IRFB9N60A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB9N60A Product Attributes
Part Number :
IRFB9N60A
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 9.2A TO-220AB
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
170W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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