IXYS - IXTD3N50P-2J

KEY Part #: K6400786

[3277pcs Stock]


    Part Number:
    IXTD3N50P-2J
    Manufacturer:
    IXYS
    Detailed description:
    MOSFET N-CH 500.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in IXYS IXTD3N50P-2J electronic components. IXTD3N50P-2J can be shipped within 24 hours after order. If you have any demands for IXTD3N50P-2J, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTD3N50P-2J Product Attributes

    Part Number : IXTD3N50P-2J
    Manufacturer : IXYS
    Description : MOSFET N-CH 500
    Series : PolarHV™
    Part Status : Last Time Buy
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 500V
    Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.5A, 10V
    Vgs(th) (Max) @ Id : 5.5V @ 50µA
    Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 409pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 70W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : Die
    Package / Case : Die