CSD16570Q5BT Pricing (USD) [56679pcs Stock]
- 1 pcs$0.68986
- 250 pcs$0.63802
- 1,250 pcs$0.48291
- Part Number:
- CSD16570Q5BT
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 25V 100A 8VSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD16570Q5BT electronic components. CSD16570Q5BT can be shipped within 24 hours after order. If you have any demands for CSD16570Q5BT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD16570Q5BT Product Attributes
Part Number :
CSD16570Q5BT
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 25V 100A 8VSON
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.59 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 12V
FET Feature :
-
Power Dissipation (Max) :
3.2W (Ta), 195W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSONP (5x6)
Package / Case :
8-PowerTDFN
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