DMN2005UFG-7 Pricing (USD) [340920pcs Stock]
- 1 pcs$0.10849
- 2,000 pcs$0.09710
- Part Number:
- DMN2005UFG-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V 18.1A POWERDI-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN2005UFG-7 electronic components. DMN2005UFG-7 can be shipped within 24 hours after order. If you have any demands for DMN2005UFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2005UFG-7 Product Attributes
Part Number :
DMN2005UFG-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V 18.1A POWERDI-8
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
164nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
6495pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.05W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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