ON Semiconductor - FDP16AN08A0

KEY Part #: K6418639

FDP16AN08A0 Pricing (USD) [71450pcs Stock]

  • 1 pcs$0.54998
  • 800 pcs$0.54725

Part Number:
FDP16AN08A0
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 75V 58A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Power Driver Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Diodes - RF and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FDP16AN08A0 electronic components. FDP16AN08A0 can be shipped within 24 hours after order. If you have any demands for FDP16AN08A0, Please submit a Request for Quotation here or send us an email:
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FDP16AN08A0 Product Attributes

Part Number : FDP16AN08A0
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 75V 58A TO-220AB
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 58A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1857pF @ 25V
FET Feature : -
Power Dissipation (Max) : 135W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3