[13421pcs Stock]
- Part Number:
- 2N6661JAN02
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 90V 0.86A TO-205.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix 2N6661JAN02 electronic components. 2N6661JAN02 can be shipped within 24 hours after order. If you have any demands for 2N6661JAN02, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N6661JAN02 Product Attributes
Part Number :
2N6661JAN02
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 90V 0.86A TO-205
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
90V
Current - Continuous Drain (Id) @ 25°C :
860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
725mW (Ta), 6.25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-39
Package / Case :
TO-205AD, TO-39-3 Metal Can
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