STB7ANM60N Pricing (USD) [59536pcs Stock]
- 1 pcs$0.65675
- 1,000 pcs$0.58685
- Part Number:
- STB7ANM60N
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STB7ANM60N electronic components. STB7ANM60N can be shipped within 24 hours after order. If you have any demands for STB7ANM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB7ANM60N Product Attributes
Part Number :
STB7ANM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V DPAK
Series :
Automotive, AEC-Q101, MDmesh™ II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
363pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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