Vishay Siliconix - SIHH21N65EF-T1-GE3

KEY Part #: K6397674

SIHH21N65EF-T1-GE3 Pricing (USD) [26122pcs Stock]

  • 1 pcs$1.58558
  • 3,000 pcs$1.57769

Part Number:
SIHH21N65EF-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 650V 19.8A POWERPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHH21N65EF-T1-GE3 electronic components. SIHH21N65EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH21N65EF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH21N65EF-T1-GE3 Product Attributes

Part Number : SIHH21N65EF-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 650V 19.8A POWERPAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 19.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2396pF @ 100V
FET Feature : -
Power Dissipation (Max) : 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 8 x 8
Package / Case : 8-PowerTDFN

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