IXYS - IXFN170N25X3

KEY Part #: K6396056

IXFN170N25X3 Pricing (USD) [3801pcs Stock]

  • 1 pcs$12.53690
  • 10 pcs$11.59686
  • 100 pcs$9.90415

Part Number:
IXFN170N25X3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 250V 170A SOT227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Zener - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in IXYS IXFN170N25X3 electronic components. IXFN170N25X3 can be shipped within 24 hours after order. If you have any demands for IXFN170N25X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN170N25X3 Product Attributes

Part Number : IXFN170N25X3
Manufacturer : IXYS
Description : MOSFET N-CH 250V 170A SOT227B
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.4 mOhm @ 85A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 13500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 390W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC