Infineon Technologies - IPB014N06NATMA1

KEY Part #: K6417877

IPB014N06NATMA1 Pricing (USD) [44528pcs Stock]

  • 1 pcs$0.87811
  • 1,000 pcs$0.76711

Part Number:
IPB014N06NATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 34A TO263-7.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Power Driver Modules, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IPB014N06NATMA1 electronic components. IPB014N06NATMA1 can be shipped within 24 hours after order. If you have any demands for IPB014N06NATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB014N06NATMA1 Product Attributes

Part Number : IPB014N06NATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 34A TO263-7
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs : 106nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7800pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3W (Ta), 214W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-7
Package / Case : TO-263-7, D²Pak (6 Leads + Tab)

You May Also Be Interested In
  • BS107P

    Diodes Incorporated

    MOSFET N-CH 200V 120MA TO92-3.

  • IRFR3607TRPBF

    Infineon Technologies

    MOSFET N-CH 75V 56A DPAK.

  • IXTY2N100P

    IXYS

    MOSFET N-CH 1000V 2A TO-252.

  • TK8A60W,S4VX

    Toshiba Semiconductor and Storage

    MOSFET N CH 600V 8A TO-220SIS.

  • SPA11N60CFDXKSA1

    Infineon Technologies

    MOSFET N-CH 600V 11A TO220-3.

  • IPA65R190E6XKSA1

    Infineon Technologies

    MOSFET N-CH 650V 20.2A TO220.