SI4413DDY-T1-GE3 Pricing (USD) [90774pcs Stock]
- 1 pcs$0.43075
- Part Number:
- SI4413DDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CHANNEL 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - JFETs and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI4413DDY-T1-GE3 electronic components. SI4413DDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4413DDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4413DDY-T1-GE3 Product Attributes
Part Number :
SI4413DDY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHANNEL 8SOIC
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
-
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
4780pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-55°C ~ 125°C
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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