Vishay Siliconix - SI4413DDY-T1-GE3

KEY Part #: K6396229

SI4413DDY-T1-GE3 Pricing (USD) [90774pcs Stock]

  • 1 pcs$0.43075

Part Number:
SI4413DDY-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CHANNEL 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Single, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - Special Purpose and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Siliconix SI4413DDY-T1-GE3 electronic components. SI4413DDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4413DDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4413DDY-T1-GE3 Product Attributes

Part Number : SI4413DDY-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CHANNEL 8SOIC
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 114nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 4780pF @ 15V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -55°C ~ 125°C
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)