TK25E06K3,S1X(S Pricing (USD) [100602pcs Stock]
- 1 pcs$0.42969
- 50 pcs$0.42755
- Part Number:
- TK25E06K3,S1X(S
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 25A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Transistors - Special Purpose and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK25E06K3,S1X(S electronic components. TK25E06K3,S1X(S can be shipped within 24 hours after order. If you have any demands for TK25E06K3,S1X(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK25E06K3,S1X(S Product Attributes
Part Number :
TK25E06K3,S1X(S
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 25A TO-220AB
Series :
U-MOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
18 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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